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IXTH 30N60P IXTQ 30N60P IXTT 30N60P
IXTV 30N60P IXTV 30N60PS
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 20 V; I D = 0.5 I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 I D25
R G = 4 ? (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
22
25
5050
540
53
29
20
80
25
82
28
30
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
0.23 ° C/W
R thCS
0.21
° C/W
Source-Drain Diode
Characteristic Values
Symbol
Test Conditions
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
I S
I SM
V SD
t rr
Q RM
V GS = 0 V
Repetitive
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = 25A, -di/dt = 100 A/ μ s
V R = 100V
500
4.0
30
80
1.5
A
A
V
ns
μ C
30
Fig. 1. Output Characteristics
@ 25 o C
60
Fig. 2. Extended Output Characteristics
@ 25 o C
27
24
21
18
V GS = 10V
8V
7V
6.5V
55
50
45
40
35
V GS = 10V
8V
7V
6.5V
15
30
12
9
6
3
0
6V
5.5V
5V
25
20
15
10
5
0
6V
5.5V
5V
0
1
2
3
4
5
6
7
8
0
3
6
9
12
15
18
21
24
27
30
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
V D S - Volts
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6,771,478 B2
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